Document Details
Document Type |
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Article In Journal |
Document Title |
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Studies of photosensitivity and photo-induced negative differential resistance (NDR) of TIPS-pentacene-poly(3- hexyl)thiophene blend organic thin film transistor Studies of photosensitivity and photo-induced negative differential resistance (NDR) of TIPS-pentacene-poly(3- hexyl)thiophene blend organic thin film transistor |
Subject |
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physics |
Document Language |
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English |
Abstract |
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We have simulated the experimental characteristics of the organic thin film transistor to reproduce the
transfer and output characteristics in saturation regime. The photoresponse and gate field dependence
of the charge transport characteristics of the TFTs were studied. The threshold voltage exhibited a
positive shift from 0.34V in darkness to 5.18 V under illumination, which can be attributed to the wellknown
photovoltaic effect resulting from the transport of photogenerated holes and trappings of
photogenerated electrons near the source electrode in organic phototransistors. When white light
irradiated the organic TFTs, a negative differential resistance (NDR) behavior appears in the saturation
region of output characteristics. This NDR behavior in TFTs can be explained in terms of trappings and
releasing mechanism of the mobile charges in the interface between the electrodes (source and drain)
and the organic layer |
ISSN |
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0379-6779 |
Journal Name |
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SYNTHETIC METALS |
Volume |
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207 |
Issue Number |
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1 |
Publishing Year |
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1435 AH
2015 AD |
Article Type |
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Article |
Added Date |
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Saturday, August 19, 2017 |
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Researchers
S Mansouri | Mansouri, S | Investigator | Doctorate | mansourislah@gmail.com |
A Jouili | Jouili, A | Researcher | Doctorate | |
A.A Al-Ghamdi, | Al-Ghamdi, A.A | Researcher | Doctorate | |
F Yakuphanoglu | Yakuphanoglu, F | Researcher | Doctorate | |
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