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Faculty of Sciences
Document Details
Document Type
:
Article In Journal
Document Title
:
Simple and efficient Monte Carlo simulation of high-temperature hole transport in silicon and diamon
Simple and efficient Monte Carlo simulation of high-temperature hole transport in silicon and diamon
Document Language
:
Arabic
Abstract
:
The Monte Carlo method is used to simulate the hole transport in silicon and diamond. A simple model based on one nonparabolic band (the heavy hole band) without iteration has been used. The temperature dependence of the density-of-states effective mass (accounting for nonparabolicity) has been taken into account in calculating the scattering rates. Carrier dynamics have been calculated using the density-of-states effective mass at room temperature, which does not vary considerably from its value at high temperature. The resulting model gives reasonable accuracy above room temperature. (C) 2001 Elsevier Science Ltd. All rights reserved.
Journal Name
:
MICROELECTRONICS JOURNAL
Volume
:
32
Issue Number
:
4
Publishing Year
:
2001 AH
Added Date
:
Tuesday, June 24, 2008
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
Gamal SH
Gamal SH
Researcher
طلال صدقة الحربي
Al-Harbi TS
Researcher
dr-tharbi@hotmail.com
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